1/8 march 2002 n high speed: t pd = 5.5ns (typ.) at v cc = 5v n low power dissipation: i cc = 2 m a (max.) at t a =25c n typical hysteresis: v h = 1v at vcc = 4.5v n power down protection on inputs n symmetrical output impedance: |i oh | = i ol = 8 ma (min) n balanced propagation delays: t plh @ t phl n operating voltage range: v cc (opr) = 2v to 5.5v n pin and function compatible with 74 series 14 n improved latch-up immunity n low noise: v olp = 0.8v (max.) description the 74vhc14 is an advanced high-speed cmos hex schmitt inverter fabricated with sub-micron silicon gate and double-layer metal wiring c 2 mos technology. the internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. power down protection is provided on all inputs and 0 to 7v can be accepted on inputs with no regard to the supply voltage. this device can be used to interface 5v to 3v. pin configuration and function are the same as those of the 74vhc04 but the 74vhc14 has hysteresis. this together with its schmitt trigger function allows it to be used on line receivers with slow rise/fall input signals. all inputs and outputs are equipped with protection circuits against static discharge, giving them 2kv esd immunity and transient excess voltage. 74vhc14 hex schmitt inverter pin connection and iec logic symbols order codes package tube t & r sop 74VHC14M 74VHC14Mtr tssop 74vhc14ttr tssop sop
74vhc14 2/8 input equivalent circuit pin description truth table absolute maximum ratings absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditi ons is not implied recommended operating conditions pin no symbol name and function 1, 3, 5, 9, 11, 13 1a to 6a data inputs 2, 4, 6, 8, 10, 12 1y to 6y data outputs 7 gnd ground (0v) 14 v cc positive supply voltage ay lh hl symbol parameter value unit v cc supply voltage -0.5 to +7.0 v v i dc input voltage -0.5 to +7.0 v v o dc output voltage -0.5 to v cc + 0.5 v i ik dc input diode current - 20 ma i ok dc output diode current 20 ma i o dc output current 25 ma i cc or i gnd dc v cc or ground current 50 ma t stg storage temperature -65 to +150 c t l lead temperature (10 sec) 300 c symbol parameter value unit v cc supply voltage 2 to 5.5 v v i input voltage 0 to 5.5 v v o output voltage 0 to v cc v t op operating temperature -55 to 125 c
74vhc14 3/8 dc specifications ac electrical characteristics (input t r = t f = 3ns) ) (*) voltage range is 3.3v 0.3v (**) voltage range is 5.0v 0.5v symbol parameter test condition value unit v cc (v) t a = 25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. v t+ high level threshold voltage 3.0 1.2 2.2 1.2 2.2 1.2 2.2 v 4.5 1.75 3.15 1.75 3.15 1.75 3.15 5.5 2.15 3.85 2.15 3.85 2.15 3.85 v t- low level threshold voltage 3.0 0.9 1.9 0.9 1.9 0.9 1.9 v 4.5 1.35 2.75 1.35 2.75 1.35 2.75 5.5 1.65 3.35 1.65 3.35 1.65 3.35 v h hysteresis voltage 3.0 0.3 1.2 0.3 1.2 0.3 1.2 v 4.5 0.4 1.4 0.4 1.4 0.4 1.4 5.5 0.5 1.6 0.5 1.6 0.5 1.6 v oh high level output voltage 2.0 i o =-50 m a 1.9 2.0 1.9 1.9 v 3.0 i o =-50 m a 2.9 3.0 2.9 2.9 4.5 i o =-50 m a 4.4 4.5 4.4 4.4 3.0 i o =-4 ma 2.58 2.48 2.4 4.5 i o =-8 ma 3.94 3.8 3.7 v ol low level output voltage 2.0 i o =50 m a 0.0 0.1 0.1 0.1 v 3.0 i o =50 m a 0.0 0.1 0.1 0.1 4.5 i o =50 m a 0.0 0.1 0.1 0.1 3.0 i o =4 ma 0.36 0.44 0.55 4.5 i o =8 ma 0.36 0.44 0.55 i i input leakage current 0 to 5.5 v i = 5.5v or gnd 0.1 1 1 m a i cc quiescent supply current 5.5 v i = v cc or gnd 22020 m a symbol parameter test condition value unit v cc (v) c l (pf) t a = 25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. t plh t phl propagation delay time 3.3 (*) 15 8.3 12.8 1.0 15.0 1.0 15.0 ns 3.3 (*) 50 10.8 16.3 1.0 18.5 1.0 18.5 5.0 (**) 15 5.5 8.6 1.0 10.0 1.0 10.0 5.0 (**) 50 7.0 10.6 1.0 12.0 1.0 12.0
74vhc14 4/8 capacitive characteristics 1) c pd is defined as the value of the ics internal equivalent capacitance which is calculated from the operating current consumption without load. (refer to test circuit). average operating current can be obtained by the following equation. i cc(opr) = c pd x v cc x f in + i cc /6 (per gate) dynamic switching characteristics 1) worst case package. 2) max number of outputs defined as (n). data inputs are driven 0v to 5.0v, (n-1) outputs switching and one output at gnd. 3) max number of data inputs (n) switching. (n-1) switching 0v to 5.0v. inputs under test switching: 5.0v to threshold (v ild ), 0v to threshold (v ihd ), f=1mhz. test circuit c l =15/50pf or equivalent (includes jig and probe capacitance) r t = z out of pulse generator (typically 50 w ) symbol parameter test condition value unit t a = 25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. c in input capacitance 6101010pf c pd power dissipation capacitance (note 1) 14 pf symbol parameter test condition value unit v cc (v) t a = 25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. v olp dynamic low voltage quiet output (note 1, 2) 5.0 c l = 50 pf 0.3 0.8 v v olv -0.8 -0.3 v ihd dynamic high voltage input (note 1, 3) 5.0 3.5 v v ild dynamic low voltage input (note 1, 3) 5.0 1.5 v
74vhc14 5/8 waveform: propagation delays (f=1mhz; 50% duty cycle)
74vhc14 6/8 dim. mm. inch min. typ max. min. typ. max. a 1.75 0.068 a1 0.1 0.2 0.003 0.007 a2 1.65 0.064 b 0.35 0.46 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.5 0.019 c1 45 (typ.) d 8.55 8.75 0.336 0.344 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 7.62 0.300 f 3.8 4.0 0.149 0.157 g 4.6 5.3 0.181 0.208 l 0.5 1.27 0.019 0.050 m 0.68 0.026 s8 (max.) so-14 mechanical data po13g
74vhc14 7/8 dim. mm. inch min. typ max. min. typ. max. a 1.2 0.047 a1 0.05 0.15 0.002 0.004 0.006 a2 0.8 1 1.05 0.031 0.039 0.041 b 0.19 0.30 0.007 0.012 c 0.09 0.20 0.004 0.0089 d 4.9 5 5.1 0.193 0.197 0.201 e 6.2 6.4 6.6 0.244 0.252 0.260 e1 4.3 4.4 4.48 0.169 0.173 0.176 e 0.65 bsc 0.0256 bsc k0 80 8 l 0.45 0.60 0.75 0.018 0.024 0.030 tssop14 mechanical data c e b a2 a e1 d 1 pin 1 identification a1 l k e 0080337d
74vhc14 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no res ponsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devi ces or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
|
